Supercritical chemical fluid deposition of high quality compound semiconductors

Afzaal, Mohammad, Aksomaityte, Gabriele, Brien, Paul, Cheng, Fei, George, Michael W, Hector, Andrew L, Howdle, Steven M, Hyde, Jason R, Levason, William, Malik, Mohamed A, Mallik, Kanad, Nguyen, Chinh Q, Reid, Gillian, Sazio, Pier, Smith, David C, Webster, Michael, Wilson, James W, Yang, Jixin and Zhang, Wenjian (2009) Supercritical chemical fluid deposition of high quality compound semiconductors.

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The main advantage of deposition from supercritical fluids over conventional CVD is the ability to fill high aspect ratio templates. Deposition of metals, indirect semiconductors and insulators into templates with dimensions down to 3 nm has been demonstrated by others, with no apparent pore blocking. In this paper we present a demonstration that it is also possible to deposit high quality, luminescent compound semiconductor films from supercritical CO2 or CO2/hexane mixtures. Depositions of CdS and III-V materials such as InP have been achieved through careful optimisation of precursor chemistry, reactor geometry and deposition conditions, supported by detailed measurements of the semiconductor film properties

Item Type: Article
Additional Information: Metadata only available from this repository. ©2009 COPYRIGHT ECS - The Electrochemical Society This article was first published in ECS Transactions journal in 2009. The published article is available online at Articles in this journal are peer-reviewed and posted online, with a monthly paper edition following electronic publication.
Keywords: supercritical fluid, compound semiconductor, deposition, luminescent
Divisions: ?? GlyndwrUniversity ??
Depositing User: ULCC Admin
Date Deposited: 05 Oct 2011 09:13
Last Modified: 11 Dec 2017 20:06

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